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NRVBS130N - Schottky Power Rectifier

Download the NRVBS130N datasheet PDF. This datasheet also covers the NRVBS130T3G variant, as both devices belong to the same schottky power rectifier family and are provided as variant models within a single manufacturer datasheet.

Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NRVBS130T3G-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NRVBS130N
Manufacturer onsemi
File Size 211.42 KB
Description Schottky Power Rectifier
Datasheet download datasheet NRVBS130N Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Surface Mount Schottky Power Rectifier MBRS130T3G, NRVBS130T3G, NRVBS130N This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Features • Small Compact Surface Mountable Package with J−Bend Leads • Rectangular Package for Automated Handling • Highly Stable Oxide Passivated Junction • Very Low Forward Voltage Drop (0.6 Volts Max @ 1.
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