NRVBS130T3G Datasheet | onsemi

Surface Mount Schottky Power Rectifier MBRS130T3G, NRVBS130T3G, NRVBS130N This device employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where pact size and weight are critical to the system. Features - Small pact Surface Mountable Package with J- Bend Leads - Rectangular Package for Automated Handling - Highly Stable Oxide Passivated Junction - Very Low Forward Voltage Drop (0.6 Volts Max @ 1.0 A, TJ = 25°C) - Excellent Ability to Withstand Reverse Avalanche Energy Transients - Guardring for Stress Protection - NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable- - These are Pb- Free Devices Mechanical Characteristics - Case: Epoxy, Molded - Weight: 95 mg (approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds - Shipped in 12 mm Tape and Reel, 2500 units per reel - Cathode Polarity Band .onsemi. SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 30 VOLTS SMB CASE 403A MARKING DIAGRAM AYWW B13G A = Assembly Location- - Y = Year WW = Work Week G = Pb- Free Package (Note: Microdot may be in either location) - - The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be...