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NRVBSS26NT3G - Schottky Power Rectifier

Download the NRVBSS26NT3G datasheet PDF. This datasheet also covers the NRVBSS26T3G variant, as both devices belong to the same schottky power rectifier family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features.
  • Compact Package with J.
  • Bend Leads Ideal for Automated Handling.
  • Highly Stable Oxide Passivated Junction.
  • Guardring for Overvoltage Protection.
  • Low Forward Voltage Drop.
  • NRVB Prefix for Automotive and Other.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NRVBSS26T3G-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET www.onsemi.com Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES 60 VOLTS SS26T3G, NRVBSS26T3G, NRVBSS26NT3G, SRVBSS26NT3G . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.