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  ON Semiconductor Electronic Components Datasheet  

NRVTS8120EMFS Datasheet

Very Low Leakage Trench-based Schottky Rectifier

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NRVTS8120EMFS
Very Low Leakage
Trench-based Schottky
Rectifier
Features
Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing Diodes
Reverse Battery Protection
LED Lighting
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
www.onsemi.com
TRENCH SCHOTTKY
RECTIFIERS
8 AMPERES
120 VOLTS
1,2,3
5,6
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
MARKING
DIAGRAM
A
A TE0812
A AYWWZZ
Not Used
C
C
TE0812
A
Y
W
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
NRVTS8120EMFST1G
Package Shipping
SO−8 FL
1500 /
(Pb−Free) Tape & Reel
NRVTS8120EMFST3G SO−8 FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 0
1
Publication Order Number:
NRVTS8120EMFS/D


  ON Semiconductor Electronic Components Datasheet  

NRVTS8120EMFS Datasheet

Very Low Leakage Trench-based Schottky Rectifier

No Preview Available !

NRVTS8120EMFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 163°C)
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 161°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
120
8.0
16
150
V
A
A
A
Storage Temperature Range
Tstg −65 to +175 °C
Operating Junction Temperature
TJ
−55 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
Symbol
RθJC
Typ
Max Unit
2.7 °C/W
ELECTRICAL CHARACTERISTICS
Rating
Instantaneous Forward Voltage (Note 1)
(IF = 4 A, TJ = 25°C)
(IF = 8 A, TJ = 25°C)
Symbol
VF
Typ
0.648
0.826
Max
0.88
Unit
V
(IF = 4 A, TJ = 125°C)
(IF = 8 A, TJ = 125°C)
Instantaneous Reverse Current (Note 1)
(VR = 90 V, TJ = 25°C)
(Rated dc Voltage, TJ = 25°C)
0.542
0.613
0.65
IR
1.3 − mA
3.70 50 mA
(VR = 90 V, TJ = 125°C)
(Rated dc Voltage, TJ = 125°C)
1.4 − mA
2.4 10 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
www.onsemi.com
2


Part Number NRVTS8120EMFS
Description Very Low Leakage Trench-based Schottky Rectifier
Maker ON Semiconductor
Total Page 5 Pages
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