Download the NRVTS860EMFST3G datasheet PDF.
This datasheet also covers the NRVTS860EMFS variant, as both devices belong to the same exceptionally low leakage trench-based schottky rectifier family and are provided as variant models within a single manufacturer datasheet.
Key Features
Fine Lithography Trench.
based Schottky Technology for Very Low
Leakage.
Fast Switching with Exceptional Temperature Stability.
Low Power Loss and Lower Operating Temperature.
Higher Efficiency for Achieving Regulatory Compliance.
Note: The manufacturer provides a single datasheet file (NRVTS860EMFS-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for NRVTS860EMFST3G (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
NRVTS860EMFST3G. For precise diagrams, and layout, please refer to the original PDF.
NRVTS860EMFS Exceptionally Low Leakage Trench-based Schottky Rectifier Features • Fine Lithography Trench−based Schottky Technology for Very Low Leakage • Fast Switching ...
View more extracted text
rench−based Schottky Technology for Very Low Leakage • Fast Switching with Exceptional Temperature Stability • Low Power Loss and Lower Operating Temperature • Higher Efficiency for Achieving Regulatory Compliance • Low Thermal Resistance • High Surge Capability • NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These are Pb−Free and Halide−Free Devices Typical Applications • Switching Power Supplies including Wireless, Smartphone and Notebook Adapters • High Frequency and DC−DC Converters • Freewheeling and OR−ing diodes • Reverse
NRVTS860EMFST3G Datasheet
