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  ON Semiconductor Electronic Components Datasheet  

NSBA123JDXV6 Datasheet

Dual PNP Bias Resistor Transistors

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MUN5135DW1,
NSBA123JDXV6,
NSBA123JDP6
Dual PNP Bias Resistor
Transistors
R1 = 2.2 kW, R2 = 47 kW
PNP Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(TA = 25°C, common for Q1 and Q2, unless otherwise noted)
Rating
Symbol
Max
Unit
Collector−Base Voltage
VCBO
50
Vdc
Collector−Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
12
Vdc
Input Reverse Voltage
VIN(rev)
5
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
Package
Shipping
MUN5135DW1T1G,
NSVMUN5135DW1T1G
SOT−363
3,000 / Tape & Reel
NSBA123JDXV6T5G
SOT−563
8,000 / Tape & Reel
NSBA123JDP6T5G
SOT−963
8,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
March, 2015 − Rev. 1
1
www.onsemi.com
PIN CONNECTIONS
(3) (2) (1)
R1
Q1
R2 R1
(4) (5)
R2
Q2
(6)
MARKING DIAGRAMS
6
0M M G
G
1
SOT−363
CASE 419B
0M M G
G
1
SOT−563
CASE 463A
MG
1G
SOT−963
CASE 527AD
0M/P
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
Publication Order Number:
DTA123JD/D


  ON Semiconductor Electronic Components Datasheet  

NSBA123JDXV6 Datasheet

Dual PNP Bias Resistor Transistors

No Preview Available !

MUN5135DW1, NSBA123JDXV6, NSBA123JDP6
THERMAL CHARACTERISTICS
Characteristic
Symbol
MUN5135DW1 (SOT−363) One Junction Heated
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 2)
(Note 1)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
MUN5135DW1 (SOT−363) Both Junction Heated (Note 3)
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 2)
(Note 1)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
Thermal Resistance,
(Note 1)
Junction to Lead (Note 2)
RqJL
Junction and Storage Temperature Range
NSBA123JDXV6 (SOT−563) One Junction Heated
Total Device Dissipation
TA = 25°C
(Note 1)
Derate above 25°C
(Note 1)
TJ, Tstg
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
RqJA
NSBA123JDXV6 (SOT−563) Both Junction Heated (Note 3)
Total Device Dissipation
TA = 25°C
(Note 1)
Derate above 25°C
(Note 1)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
RqJA
Junction and Storage Temperature Range
NSBA123JDP6 (SOT−963) One Junction Heated
Total Device Dissipation
TA = 25°C
(Note 4)
(Note 5)
Derate above 25°C
(Note 5)
(Note 4)
TJ, Tstg
PD
Thermal Resistance,
Junction to Ambient
(Note 4)
(Note 5)
RqJA
NSBA123JDP6 (SOT−963) Both Junction Heated (Note 3)
Total Device Dissipation
TA = 25°C
(Note 4)
(Note 5)
Derate above 25°C
(Note 5)
(Note 4)
PD
Thermal Resistance,
Junction to Ambient
(Note 4)
(Note 5)
RqJA
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. Both junction heated values assume total power is sum of two equally powered channels.
4. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
5. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
TJ, Tstg
Max Unit
187 mW
256
1.5 mW/°C
2.0
670 °C/W
490
250
385
2.0
3.0
493
325
188
208
−55 to +150
mW
mW/°C
°C/W
°C/W
°C
357 mW
2.9 mW/°C
°C/W
350
500
4.0
250
−55 to +150
mW
mW/°C
°C/W
°C
231 mW
269
1.9 mW/°C
2.2
540 °C/W
464
339
408
2.7
3.3
369
306
−55 to +150
mW
mW/°C
°C/W
°C
www.onsemi.com
2


Part Number NSBA123JDXV6
Description Dual PNP Bias Resistor Transistors
Maker ON Semiconductor
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NSBA123JDXV6 Datasheet PDF






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