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  ON Semiconductor Electronic Components Datasheet  

NSR02100HT1G Datasheet

Schottky Barrier Diode

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NSR02100HT1G
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
Fast Switching Speed
Low Leakage Current
Low Forward Voltage − 0.45 V @ IF = 1 mAdc
Surface Mount Device
Low Capacitance Diode
NSVR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1)
TA = 25°C
Derate above 25°C
Forward Current (DC)
Non−Repetitive Peak Forward Current,
tp < 10 msec
Thermal Resistance
Junction−to−Ambient
Junction and Storage Temperature Range
Symbol Value Unit
PD
IF
IFSM
200 mW
1.57 mW/°C
200 mA
2A
RqJA
TJ, Tstg
635
−55
to150
°C/W
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 Minimum Pad
www.onsemi.com
100 VOLT SCHOTTKY
BARRIER DIODE
SOD−323
CASE 477
STYLE 1
1
CATHODE
2
ANODE
MARKING DIAGRAM
JCM G
1 G2
JC = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NSR02100HT1G
Package
SOD−323
(Pb−Free)
Shipping
3,000 /
Tape & Reel
NSVR02100HT1G SOD−323
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
December, 2016 − Rev. 1
1
Publication Order Number:
NSR02100HT1/D


  ON Semiconductor Electronic Components Datasheet  

NSR02100HT1G Datasheet

Schottky Barrier Diode

No Preview Available !

NSR02100HT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Reverse Breakdown Voltage
(IR = 10 μA)
VR
− 100 −
V
Reverse Leakage
(VR = 50 V)
IR μAdc
− − 0.05
Reverse Leakage
(VR = 100 V)
IR mAdc
− − 0.15
Forward Voltage
(IF = 1 mAdc)
VF
Vdc
− 0.45
Forward Voltage
(IF = 10 mAdc)
VF
Vdc
− 0.57
Forward Voltage
(IF = 100 mAdc)
VF
Vdc
− 0.80
Forward Voltage
(IF = 200 mAdc)
VF
Vdc
− 0.95
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
pF
4 10
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2


Part Number NSR02100HT1G
Description Schottky Barrier Diode
Maker ON Semiconductor
Total Page 4 Pages
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