NSR0230M2T5G Datasheet | onsemi

NSR0230M2T5G, NSVR0230M2T5G Schottky Barrier Diode These Schottky barrier diodes are designed for high- speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand- held and portable applications where space is limited. Features - Extremely Fast Switching Speed - Extremely Low Forward Voltage 0.325 V (max) @ IF = 10 m A - Low Reverse Current - AEC Qualified and PPAP Capable - NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements - This is a Pb- Free Device- MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage Forward Current DC Forward Current Surge Peak (60 Hz, 1 cycle) VR 30 Vdc IF 200 m A IFSM ESD Rating: Class 3B per Human Body Model Class C per Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction- to- Ambient Junction and Storage Temperature Range 1. FR- 5 Minimum Pad. Symbol PD Rq JA TJ, Tstg Max 167 2.0 600 - 55 to...