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NSR02F30MX - Schottky Barrier Diode

Features

  • Low Forward Voltage Drop.
  • 500 mV (Typ. ) @ IF = 200 mA.
  • Low Reverse Current.
  • 20 mA (Typ. ) @ VR = 30 V.
  • 200 mA of Continuous Forward Current.
  • ESD Rating.
  • Human Body Model: Class 2.
  • Machine Model: Class M3.
  • CDM: Class IV.
  • High Switching Speed.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant Typical.

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Datasheet Details

Part number NSR02F30MX
Manufacturer onsemi
File Size 93.29 KB
Description Schottky Barrier Diode
Datasheet download datasheet NSR02F30MX Datasheet

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Full PDF Text Transcription

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NSR02F30MX 200 mA, 30 V Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in a spacing saving x3DFN 0201 package ideal for space constraint applications. Features • Low Forward Voltage Drop − 500 mV (Typ.) @ IF = 200 mA • Low Reverse Current – 20 mA (Typ.
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