900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




  ON Semiconductor Electronic Components Datasheet  

NSR02F30MX Datasheet

Schottky Barrier Diode

No Preview Available !

NSR02F30MX
200 mA, 30 V Schottky
Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current that offers the most optimal
power dissipation in applications. They are housed in a spacing saving
x3DFN 0201 package ideal for space constraint applications.
Features
Low Forward Voltage Drop − 500 mV (Typ.) @ IF = 200 mA
Low Reverse Current – 20 mA (Typ.) @ VR = 30 V
200 mA of Continuous Forward Current
ESD Rating − Human Body Model: Class 2
− Machine Model: Class M3
− CDM: Class IV
High Switching Speed
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dc−dc Converters
Reverse Voltage and Current Protection
Clamping and Protection
MAXIMUM RATINGS
Rating
Symbol Value Unit
Reverse Voltage
Forward Current (DC)
Forward Surge Current
(60 Hz @ 1 cycle)
VR
IF
IFSM
30 V
200 mA
2A
Repetitive Peak Forward Current
IFRM 1 A
(Pulse Wave = 1 sec, Duty Cycle = 66%)
ESD Rating: Human Body Model
Machine Model
ESD
2−4
>400
kV
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
1
Cathode
2
Anode
X3DFN2
CASE 152AF
MARKING
DIAGRAM
PIN 1
M
J = Specific Device Code
= (Rotated 180°)
M = Month Code
ORDERING INFORMATION
Device
Package
Shipping
NSR02F30MXT5G X3DFN 10000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
April, 2016 − Rev. 1
1
Publication Order Number:
NSR02F30MX/D


  ON Semiconductor Electronic Components Datasheet  

NSR02F30MX Datasheet

Schottky Barrier Diode

No Preview Available !

NSR02F30MX
Table 1. THERMAL CHARACTERISTICS
Rating
Symbol
Max
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25_C
RθJA
PD
695
180
Storage Temperature Range
Tstg −55 to +125
Junction Temperature
TJ +125
1. Mounted onto a 4 in square FR−4 board 100 mm sq. 2 oz. Cu 0.06thick single sided. Operating to steady state.
Table 2. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Test Conditions
Symbol
Reverse Leakage
Reverse Leakage
Forward Voltage
Forward Voltage
Forward Voltage
Forward Voltage
Total Capacitance
Reverse Recovery Time
VR = 10 V
VR = 30 V
IF = 1 mA
IF = 10 mA
IF = 100 mA
IF = 200 mA
VR = 1.0 V, f = 1.0 MHz
IF = IR = 10 mA, IR(REC) = 1.0 mA, Figure 2
IR
IR
VF
VF
VF
VF
CT
trr
Min
Typ
20
155
250
375
500
6
2.4
Unit
°C/W
mW
°C
°C
Max Unit
15 mA
50 mA
mV
290 mV
490 mV
600 mV
8 pF
3 ns
Figure 1. Recovery Time Equivalent Test Circuit
Figure 2. Peak Forward Recover Voltage Definition
www.onsemi.com
2


Part Number NSR02F30MX
Description Schottky Barrier Diode
Maker ON Semiconductor
Total Page 4 Pages
PDF Download

NSR02F30MX Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 NSR02F30MX Schottky Barrier Diode
ON Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy