NSS12100M3T5G Description
NSS12100M3T5G 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC-DC converters and...
NSS12100M3T5G Key Features
- ăHigh Continuous Current Capability (1 A) -ăLow VCE(sat) (150 mV Typical @ 500 mA) -ăSmall Size 1.2 mm x 1.2 mm -ăThis i
- ăHigh Specific Current and Power Capability Reduces Required PCB Area -ăReduced Parasitic Losses Increases Battery Life
- Continuous Collector Current
- Peak Electrostatic Discharge Symbol VCEO VCBO VEBO IC ICM ESD Max -12 -12 -5.0 -1.0 -3.0 Unit Vdc Vdc Vdc Adc
- Rev. 0