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NST847BDP6T5G

NST847BDP6T5G is Dual General Purpose Transistor manufactured by onsemi.
NST847BDP6T5G datasheet preview

NST847BDP6T5G Datasheet

Part number NST847BDP6T5G
Download NST847BDP6T5G Datasheet (PDF)
File Size 118.58 KB
Manufacturer onsemi
Description Dual General Purpose Transistor
NST847BDP6T5G page 2 NST847BDP6T5G page 3

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NST847BDP6T5G Distributor

NST847BDP6T5G Description

The NST847BDP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium.

NST847BDP6T5G Key Features

  • Emitter Voltage Collector
  • Base Voltage Emitter
  • Base Voltage Collector Current
  • Continuous Electrostatic Discharge
  • 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W Unit mW mW/°C °C/W mW mW/°C °C/W °C J M G 1 JMG G
  • Rev. 0
  • Emitter Breakdown Voltage (IC = 10 mA) Collector
  • Emitter Breakdown Voltage (IC = 10 mA, VEB = 0) Collector
  • Base Breakdown Voltage (IC = 10 mA) Emitter
  • Base Breakdown Voltage (IE = 1.0 mA

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