NST847BF3T5G Datasheet | onsemi

onsemi. COLLECTOR 3 1 BASE 2 EMITTER NST847BF3T5G Symbol VCEO VCBO VEBO IC Value 45 50 6.0 100 Unit Vdc Vdc Vdc m Adc 1 2 3 - - - - h FE, 200- 450 Low VCE(sat), ≤ 0.25 V Reduces Board Space This is a Pb- Free Device MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, TA = 25°C Derate above 25°C Thermal Resistance, Junction- to- Ambient Total Device Dissipation, TA = 25°C Derate above 25°C Thermal Resistance, Junction- to- Ambient Thermal Resistance, Junction- to- Lead 3 Junction and Storage Temperature Range Symbol PD (Note 1) Rq JA (Note 1) PD (Note 2) Rq JA (Note 2) RYJL (Note 2) TJ, Tstg Max 290 2.3 432 347 2.8 360 143 - 55 to +150 Unit m W m W/°C °C/W m W m W/°C °C/W °C/W °C SOT- 1123 CASE 524AA STYLE 1 MARKING DIAGRAM 4M 4 M = Device Code = Date Code ORDERING INFORMATION Device NST847BF3T5G Package Shipping† Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. 1. 100 mm2 1 oz, copper traces. 2. 500 mm2 1 oz, copper traces. SOT- 1123 8000/Tape & Reel (Pb- Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. .. © Semiconductor ponents Industries, LLC, 2008 April, 2008 - Rev. 0 Publication Order Number: NST847BF3/D ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 10 m A)...