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NST847BDP6T5G

Manufacturer: onsemi

NST847BDP6T5G datasheet by onsemi.

NST847BDP6T5G datasheet preview

NST847BDP6T5G Datasheet Details

Part number NST847BDP6T5G
Datasheet NST847BDP6T5G_ONSemiconductor.pdf
File Size 118.58 KB
Manufacturer onsemi
Description Dual General Purpose Transistor
NST847BDP6T5G page 2 NST847BDP6T5G page 3

NST847BDP6T5G Overview

The NST847BDP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium.

NST847BDP6T5G Key Features

  • Emitter Voltage Collector
  • Base Voltage Emitter
  • Base Voltage Collector Current
  • Continuous Electrostatic Discharge
  • 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W Unit mW mW/°C °C/W mW mW/°C °C/W °C J M G 1 JMG G
  • Rev. 0
  • Emitter Breakdown Voltage (IC = 10 mA) Collector
  • Emitter Breakdown Voltage (IC = 10 mA, VEB = 0) Collector
  • Base Breakdown Voltage (IC = 10 mA) Emitter
  • Base Breakdown Voltage (IE = 1.0 mA
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NST847BDP6T5G Distributor

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