NST847BDP6T5G Datasheet | onsemi

BDP6T5G Dual General Purpose Transistor http://onsemi. (3) (2) (1) - - - - - - h FE, 200- 450 Low VCE(sat), ≤ 0.25 V Simplifies Circuit Design Reduces Board Space Reduces ponent Count This is a Pb- Free Device Rating Symbol VCEO VCBO VEBO IC HBM MM ESD Class Value 45 50 6.0 100 2 B Unit Vdc Vdc Vdc m Adc Q1 Q2 (4) (5) NST847BDP6T5G (6) MAXIMUM RATINGS Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Electrostatic Discharge SOT- 963 CASE 527AD PLASTIC THERMAL CHARACTERISTICS Characteristic (Single Heated) Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation TA = 25°C Derate above 25°C (Note 2) Thermal Resistance, Junction-to-Ambient (Note 2) Characteristic (Dual Heated) (Note 3) Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation TA = 25°C Derate above 25°C (Note 2) Thermal Resistance, Junction-to-Ambient (Note 2) Symbol PD Rq JA PD Rq JA Symbol PD Rq JA PD Rq JA TJ, Tstg Max 240 1.9 520 280 2.2 446 Max 350 2.8 357 420 3.4 297 - 55 to +150 Unit m W m W/°C °C/W m W m W/°C °C/W Unit m W m W/°C °C/W m W m W/°C °C/W °C J M G 1 JMG G MARKING DIAGRAM = Device Code = Date Code = Pb- Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NST847BDP6T5G Package SOT- 963 (Pb- Free) Shipping† 8000/Tape & Reel .. Junction and Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. 1. FR- 4 @ 100 mm2, 1 oz. copper traces, still air. 2. FR- 4 @ 500 mm2, 1 oz. copper traces, still air. 3. Dual heated values assume total power is sum of two equally powered channels. ©...