NTB082N65S3F Datasheet - ON Semiconductor

Power MOSFET

NTB082N65S3F Features

* 700 V @ TJ = 150°C

* Typ. RDS(on) = 70 mW

* Ultra Low Gate Charge (Typ. Qg = 81 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)

* 100% Avalanche Tested

* These Devices are Pb

* Free and are RoHS Compliant Applications

NTB082N65S3F General Description

SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switc.

NTB082N65S3F Datasheet (302.57 KB)