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  ON Semiconductor Electronic Components Datasheet  

NTB082N65S3F Datasheet

Power MOSFET

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NTB082N65S3F
Power MOSFET, N‐Channel,
SUPERFET) III, FRFET),
650 V, 40 A, 82 mW
Description
SUPERFET III MOSFET is ON Semiconductor’s brand-new high
voltage super-junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on-resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET is very suitable for the
various power system for miniaturization and higher efficiency.
SUPERFET III FRFET MOSFET’s optimized reverse recovery
performance of body diode can remove additional component and
improve system reliability.
Features
700 V @ TJ = 150°C
Typ. RDS(on) = 70 mW
Ultra Low Gate Charge (Typ. Qg = 81 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)
100% Avalanche Tested
These Devices are PbFree and are RoHS Compliant
Applications
Telecom / Server Power Supplies
Industrial Power Supplies
EV Charger
UPS / Solar
www.onsemi.com
VDSS
650 V
RDS(ON) MAX
82 mW @ 10 V
ID MAX
40 A
D
G
S
D
G
S
D2PAK3
CASE 418AJ
MARKING DIAGRAM
$Y&Z&3&K
NTB
082N65S3F
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Data Code (Year & Week)
&K = Lot
NTB082N65S3F = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
November, 2018 Rev. 3
1
Publication Order Number:
NTB082N65S3F/D


  ON Semiconductor Electronic Components Datasheet  

NTB082N65S3F Datasheet

Power MOSFET

No Preview Available !

NTB082N65S3F
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified)
Symbol
Parameter
Value
Unit
VDSS
VGSS
Drain to Source Voltage
Gate to Source Voltage
DC
AC (f > 1 Hz)
650 V
±30 V
±30 V
ID
IDM
EAS
IAS
EAR
dv/dt
Drain Current
Drain Current
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
Continuous (TC = 25°C)
Continuous (TC = 100°C)
Pulsed (Note 1)
40
25.5
100
510
4.8
3.13
100
A
A
mJ
A
mJ
V/ns
Peak Diode Recovery dv/dt (Note 3)
50
PD Power Dissipation
(TC = 25°C)
Derate Above 25°C
313 W
2.5 W/°C
TJ, TSTG
Operating and Storage Temperature Range
55 to +150
°C
TL Maximum Lead Temperature for Soldering, 1/8from Case for 5 s
300 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 4.8 A, RG = 25 W, starting TJ = 25°C.
3. ISD £ 20 A, di/dt 100 A/ms, VDD 400 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
RqJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (1 in2 Pad of 2oz Copper), Max.
Value
0.4
62.5
Unit
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
Quantity
NTB082N65S3F
NTB082N65S3F
D2PAK
Tape and Reel
330 mm
24 mm
800 Units
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2


Part Number NTB082N65S3F
Description Power MOSFET
Maker ON Semiconductor
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