NTB082N65S3F Description
·Drain-source on-resistance: RDS(on) ≤ 82mΩ@10V ·Drain Source Voltage: VDSS= 650V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS.
NTB082N65S3F Datasheet
| Part number | NTB082N65S3F |
|---|---|
| Download | NTB082N65S3F Datasheet (PDF) |
| File Size | 228.89 KB |
| Manufacturer | Inchange Semiconductor |
| Description | N-Channel MOSFET |
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