Datasheet Summary
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
- DESCRIPTION
- Drain-source on-resistance: RDS(on) ≤ 82mΩ@10V
- Drain Source Voltage: VDSS= 650V(Min)
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATIONS
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- Industrial power supplies
-...
