The NTB082N65S3F is a Power MOSFET.
| Height | 5.08 mm |
|---|---|
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | NTB082N65S3F Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
SUPERFET III MOSFET is ON Semiconductor’s brand-new high
voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge p.
* 700 V @ TJ = 150°C * Typ. RDS(on) = 70 mW * Ultra Low Gate Charge (Typ. Qg = 81 nC) * Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF) * 100% Avalanche Tested * These Devices are Pb *Free and are RoHS Compliant Applications * Telecom / Server P. |
| Part Number | NTB082N65S3F Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Drain-source on-resistance: RDS(on) ≤ 82mΩ@10V ·Drain Source Voltage: VDSS= 650V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPL. emiconductor NTB082N65S3F SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS= 20A ;VGS= 0 RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VGS= 10V; ID=. |
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| Newark | 1896 | 1+ : 11.5 USD 10+ : 8.53 USD 25+ : 8.11 USD 50+ : 7.7 USD |
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| Verical | 15200 | 65+ : 5.85 USD 100+ : 5.5625 USD 500+ : 5.2625 USD 1000+ : 4.975 USD |
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