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NTB30N20 - Power MOSFET

Features

  • Source.
  • to.
  • Drain Diode Recovery Time Comparable to a Discrete.
  • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature Mounting Information Provided for the D2PAK Package VDSS 200 V http://onsemi. com RDS(ON) TYP 68 mΩ @ VGS = 10 V ID MAX 30 A Typical.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com NTB30N20 Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode D2PAK Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature Mounting Information Provided for the D2PAK Package VDSS 200 V http://onsemi.com RDS(ON) TYP 68 mΩ @ VGS = 10 V ID MAX 30 A Typical Applications • PWM Motor Controls • Power Supplies • Converters MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Drain−to−Source Voltage (RGS = 1.
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