Datasheet Summary
MOSFET
- Power, N-Channel
100 V, 4.2 mW, 201 A
Features
- Low RDS(on)
- High Current Capability
- Wide SOA
- These Devices are Pb- Free and are RoHS pliant
Applications
- Hot Swap in 48 V Systems
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
- Continuous
$20
Continuous Drain
Steady TC = 25°C
Current RqJC
State TC = 100°C
Power Dissipation
Steady TC = 25°C
RqJC
State
Pulsed Drain Current tp = 10 ms
Operating Junction and Storage Temperature TJ, Tstg
- 55 to...