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MOSFET - Power, N-Channel
100 V, 4.2 mW, 201 A
NTB004N10G
Features
• Low RDS(on) • High Current Capability • Wide SOA • These Devices are Pb−Free and are RoHS Compliant
Applications
• Hot Swap in 48 V Systems
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
100
V
Gate−to−Source Voltage − Continuous
VGS
$20
V
Continuous Drain
Steady TC = 25°C
ID
Current RqJC
State TC = 100°C
201
A
142
Power Dissipation
Steady TC = 25°C
PD
RqJC
State
340
W
Pulsed Drain Current
tp = 10 ms
IDM
3002
A
Operating Junction and Storage Temperature TJ, Tstg −55 to °C
Range
+175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 102 A, L = 0.
NTB004N10G Datasheet
