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  ON Semiconductor Electronic Components Datasheet  

NTB5426N Datasheet

Power MOSFET

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NTB5426N, NTP5426N
Power MOSFET
120 Amps, 60 Volts
N-Channel D2PAK, TO-220
Features
Low RDS(on)
High Current Capability
Avalanche Energy Specified
These are PbFree Devices
Applications
www.DataPShoeweet4r US.ucpopmlies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value
DraintoSource Voltage
GatetoSource Voltage Continuous
GatetoSource Voltage Nonrepetitive
(TP < 10 ms)
Continuous Drain
C(Nuortreen1t)RqJC
Steady
State
TC = 25°C
TC = 100°C
Power Dissipation
RqJC (Note 1)
Steady TC = 25°C
State
Pulsed Drain Current
tp = 10 ms
Operating and Storage Temperature Range
VDSS
VGS
VGS
ID
PD
IDM
TJ, Tstg
60
$20
30
120
85
215
260
55 to
+175
Source Current (Body Diode)
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 70 A,
L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering
Purposes, 1/8from Case for 10 Seconds
IS 60
EAS 735
TL 260
Unit
V
V
V
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
JunctiontoCase (Drain)
Steady State (Note 1)
RqJC
0.7 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2008
November, 2008 Rev. 0
1
http://onsemi.com
V(BR)DSS
60 V
RDS(ON) MAX
6.0 mW @ 10 V
ID MAX
(Note 1)
120 A
NChannel
D
G
S
4
4
12
3
12
3
TO220AB
CASE 221A
STYLE 5
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
5426N
AYWW
1
Gate
5426N
AYWW
31
Source Gate
2
Drain
3
Source
2
Drain
G
A
Y
WW
= PbFree Device
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
NTB5426N/D


  ON Semiconductor Electronic Components Datasheet  

NTB5426N Datasheet

Power MOSFET

No Preview Available !

NTB5426N, NTP5426N
ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified)
Characteristics
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VDS = 0 V, ID = 250 mA
60
64
V
mV/°C
Zero Gate Voltage Drain Current
GateBody Leakage Current
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
VGS = 0 V
VDS = 60 V
TJ = 25°C
TJ = 150°C
VDS = 0 V, VGS = $20 V
1.0
25
$100
mA
nA
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
DraintoSource On Voltage
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VGS(th)
VGS(th)/TJ
VDS(on)
Static DraintoSource OnResistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 60 A
VGS = 10 V, ID = 60 A, 150°C
VGS = 10 V, ID = 60 A
VDS = 15 V, ID = 20 A
2.0
3.1 4.0
V
9.2 mV/°C
0.3 0.36
V
0.6
4.9 6.0 mW
65 S
Input Capacitance
Ciss
Output Capacitance
Coss
Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
GatetoSource Charge
QGS
GatetoDrain Charge
QGD
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
TurnOn Delay Time
td(on)
Rise Time
tr
TurnOff Delay Time
td(off)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VGS = 10 V, VDS = 48 V,
ID = 60 A
VGS = 10 V, VDD = 48 V,
ID = 60 A, RG = 3.0 W
5800
1000
370
150
6.0
28
67
170
pF
nC
15 ns
100
105
95
Forward Diode Voltage
VSD
VGS = 0 V
IS = 60 A
TJ = 25°C
TJ = 100°C
Reverse Recovery Time
Charge Time
trr IS = 60 Adc, VGS = 0 Vdc,
ta dIS/dt = 100 A/ms
Discharge Time
tb
Reverse Recovery Stored Charge
QRR
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
0.88 1.1 Vdc
0.78
75 ns
50
25
235 mC
ORDERING INFORMATION
Device
Package
Shipping
NTP5426N
TO220AB (PbFree)
50 Units / Rail
NTB5426NT4G
D2PAK (PbFree)
800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2


Part Number NTB5426N
Description Power MOSFET
Maker ON Semiconductor
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NTB5426N Datasheet PDF






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