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NTBGS4D1N15MC - Single N-Channel MOSFET

Key Features

  • Low RDS(on) to Minimize Conduction Losses.
  • Low QG and Capacitance to Minimize Driver Losses.
  • Lowers Switching Noise/EMI.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant Typical.

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MOSFET - Single N-Channel 150 V, 4.1 mW, 185 A NTBGS4D1N15MC Features  Low RDS(on) to Minimize Conduction Losses  Low QG and Capacitance to Minimize Driver Losses  Lowers Switching Noise/EMI  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications  Power Tools, Battery Operated Vacuums  UAV/Drones, Material Handling  BMS/Storage, Home Automation MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 150 V Gate−to−Source Voltage VGS 20 V Continuous Drain Current RqJC (Note 2) Power Dissipation RqJC (Note 2) ID Steady State TC = 25C PD 185 A 316 W Continuous Drain Current RqJA (Notes 1, 2) Power Dissipation RqJA (Notes 1, 2) ID Steady State TA = 25C PD 20 A 3.