NTBGS4D1N15MC Datasheet | onsemi

MOSFET - Single N-Channel 150 V, 4.1 m W, 185 A Features - Low RDS(on) to Minimize Conduction Losses - Low QG and Capacitance to Minimize Driver Losses - Lowers Switching Noise/EMI - These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant Typical Applications - Power Tools, Battery Operated Vacuums - UAV/Drones, Material Handling - BMS/Storage, Home Automation MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Symbol Value Unit Drain- to- Source Voltage VDSS Gate- to- Source Voltage 20 Continuous Drain Current Rq JC (Note 2) Power Dissipation Rq JC (Note 2) Steady State TC = 25C 316 W Continuous Drain Current Rq JA (Notes 1, 2) Power Dissipation Rq JA (Notes 1, 2) Steady State TA = 25C Pulsed Drain Current TA = 25C, tp = 10 ms 2564...