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NTCR013N120M3S - SiC MOSFET

General Description

that provides superior switching performance and higher reliability compared to Silicon.

In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.

Key Features

  • Typ. RDS(on) = 13 mW @ VGS = 18 V.
  • Low Switching Losses (Typ. EON 563 J at 75 A, 800 V).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Carbide (SiC) MOSFET – EliteSiC, 13 mohm, 1200 V, M3S, Die NTCR013N120M3S Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. Features • Typ. RDS(on) = 13 mW @ VGS = 18 V • Low Switching Losses (Typ. EON 563 J at 75 A, 800 V) Applications • Solar Inverters • Electric Vehicle Charging Stations • Uninterruptible Power Supplies (UPS) • Energy Storage Systems • Switch Mode Power Supplies (SMPS) DIE DATA SHEET www.onsemi.