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NTD360N65S3H - N-Channel MOSFET

General Description

voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Key Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 296 mW.
  • Ultra Low Gate Charge (Typ. Qg = 17.5 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 180 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET - Power, N‐Channel, SUPERFET) III, FAST 650 V, 360 mW, 10 A NTD360N65S3H Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III FAST MOSFET series helps minimize various power systems and improve system efficiency. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 296 mW • Ultra Low Gate Charge (Typ. Qg = 17.5 nC) • Low Effective Output Capacitance (Typ. Coss(eff.