NTD3813N
Overview
- ăLow RDS(on) to Minimize Conduction Losses
- ăLow Capacitance to Minimize Driver Losses
- ăOptimized Gate Charge to Minimize Switching Losses
- ăThree Package Variations for Design Flexibility
- ăThese are Pb-Free Devices
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |