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NTD4856N, NVD4856N
Power MOSFET
25 V, 89 A, Single N−Channel, DPAK/IPAK
Features
• Trench Technology • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Applications
• VCORE Applications • DC−DC Converters • Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJA (Note 1)
VDSS
25
V
VGS
±20
V
TA = 25°C
ID
16.8
A
TA = 85°C
13.0
Power Dissipation RqJA (Note 1)
TA = 25°C
PD
2.
NTD4856N Datasheet
