NTD4857N
NTD4857N is Power MOSFET manufactured by onsemi.
Power MOSFET
25 V, 78 A, Single N--Channel, DPAK/IPAK
Features
- Trench Technology
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- Optimized Gate Charge to Minimize Switching Losses
- These are Pb--Free Devices
Applications
- VCORE Applications
- DC--DC Converters
- Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain--to--Source Voltage Gate--to--Source Voltage Continuous Drain Current RθJA (Note 1)
VDSS 25 V
VGS ±20 V
TA = 25°C
15 A
TA = 85°C
Power Dissipation RθJA (Note 1) Continuous Drain Current RθJA (Note 2)
Power Dissipation RθJA (Note 2) Continuous Drain...
