NTD4856N
NTD4856N is Power MOSFET manufactured by onsemi.
NTD4856N, NVD4856N
Power MOSFET
25 V, 89 A, Single N- Channel, DPAK/IPAK
Features
- Trench Technology
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- Optimized Gate Charge to Minimize Switching Losses
- NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free and are RoHS pliant
Applications
- VCORE Applications
- DC- DC Converters
- Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
Gate- to- Source Voltage
Continuous Drain Current RqJA (Note...
