NTD4863N Datasheet | onsemi

Features 25 V, 49 A, Single N-Channel, DPAK/IPAK - - - - - Trench Technology Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi. V(BR)DSS 25 V RDS(ON) MAX 9.3 mΩ @ 10 V 14 mΩ @ 4.5 V D ID MAX 49 A Applications - VCORE Applications - DC--DC Converters - High Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain--to--Source Voltage Gate--to--Source Voltage Continuous Drain Current RθJA (Note 1) Power Dissipation RθJA (Note 1) Continuous Drain Current RθJA (Note 2) Power Dissipation RθJA (Note 2) Continuous Drain Current RθJC (Note 1) Power Dissipation RθJC (Note 1) Pulsed Drain Current tp=10ms Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C TA = 25°C PD IDM IDmax Pkg TJ, TSTG IS d V/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 25 ±20 11.3 8.8 1.95 9.2 7.1 1.27 49 38 36.6 98 35 --55 to +175 30.5 6 60.5 W A A °C A V/ns m J 4 Drain YWW 48 63NG W A W A 1 2 3 Unit V V A G S N-CHANNEL MOSFET 4 4 1 4 CASE 369AA DPAK (Bent Lead) STYLE 2 2 3 CASE 369AC CASE 369D 3 IPAK IPAK (Straight Lead) (Straight Lead DPAK) 2 3 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain YWW 48 63NG 4 Drain YWW 48 63NG Free Datasheet http://../ Current Limited by Package Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source d V/dt Single Pulse Drain--to--Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 11 Apk, L = 1.0 m H, RG = 25 Ω) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) °C 2 1 2 3 1 Drain 3 Gate Source Gate Drain Source 1 2 3 Gate Drain Source Y WW 4863N G = Year = Work Week = Device Code = Pb--Free Package Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure...