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NTD4860N - Power MOSFET

Features

  • ăTrench Technology.
  • ăLow RDS(on) to Minimize Conduction Losses.
  • ăLow Capacitance to Minimize Driver Losses.
  • ăOptimized Gate Charge to Minimize Switching Losses.
  • ăThese are Pb-Free Devices.

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NTD4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS(on) to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices Applications http://onsemi.com V(BR)DSS 25 V RDS(ON) MAX 7.5 mW @ 10 V 11.1 mW @ 4.
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