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NTD4863N - Power MOSFET

Features

  • 25 V, 49 A, Single N-Channel, DPAK/IPAK.
  • Trench Technology Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi. com V(BR)DSS 25 V RDS(ON) MAX 9.3 mΩ @ 10 V 14 mΩ @ 4.5 V D ID MAX 49 A.

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Full PDF Text Transcription (Reference)

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NTD4863N Power MOSFET Features 25 V, 49 A, Single N-Channel, DPAK/IPAK • • • • • Trench Technology Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com V(BR)DSS 25 V RDS(ON) MAX 9.3 mΩ @ 10 V 14 mΩ @ 4.
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