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  ON Semiconductor Electronic Components Datasheet  

NTD4909N Datasheet

Power MOSFET

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NTD4909Nwww.DataSheet4U.com
Power MOSFET
30 V, 41 A, Single NChannel, DPAK/IPAK
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are PbFree Devices
Applications
CPU Power Delivery
DCDC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current (RqJA)
(Note 1)
TA = 25°C
TA = 100°C
VDSS
VGS
ID
30
"20
12.1
8.6
V
V
A
Power Dissipation
(RqJA) (Note 1)
Continuous Drain
C(Nuorrteen2t)(RqJA)
Power Dissipation
(RqJA) (Note 2)
Continuous Drain
C(Nuortreen1t)(RqJC)
TA = 25°C
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TC = 25°C
TC = 100°C
PD
ID
PD
ID
2.6 W
8.8 A
6.2
1.37 W
41 A
29
Power Dissipation
(RqJC) (Note 1)
TC = 25°C
Pulsed Drain Current tp=10ms TA = 25°C
Current Limited by Package
TA = 25°C
Operating Junction and Storage Temperature
PD
IDM
IDmaxPkg
TJ, Tstg
29.4
167
60
55 to
175
W
A
A
°C
Source Current (Body Diode)
Drain to Source dV/dt
IS
dV/dt
27 A
7.0 V/ns
Single Pulse DraintoSource Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
L = 0.1 mH, IL(pk) = 24 A, RG = 25 W)
EAS
28 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
8.0 mW @ 10 V
12 mW @ 4.5 V
D
ID MAX
41 A
NChannel
G
S
4
4
4
12
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
1 23
1 23
CASE 369AD CASE 369D
IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
4 Drain
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
1
23
Gate Drain Source
Y = Year
WW = Work Week
4909N = Device Code
G = PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
June, 2009 Rev. 1
1
Publication Order Number:
NTD4909N/D


  ON Semiconductor Electronic Components Datasheet  

NTD4909N Datasheet

Power MOSFET

No Preview Available !

NTD4909N
www.DataTSHheEeRt4MUA.cLomRESISTANCE MAXIMUM RATINGS
Parameter
JunctiontoCase (Drain)
JunctiontoTAB (Drain)
JunctiontoAmbient Steady State (Note 3)
JunctiontoAmbient Steady State (Note 4)
3. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu.
4. Surfacemounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 5)
IDSS
IGSS
VGS = 0 V,
VDS = 24 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = "20 V
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
DraintoSource On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
VGS(TH)
VGS(TH)/TJ
RDS(on)
gFS
VGS = VDS, ID = 250 mA
VGS = 10 V
ID = 30 A
ID = 15 A
VGS = 4.5 V
ID = 30 A
ID = 15 A
VDS = 1.5 V, ID = 30 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
GatetoSource Charge
GatetoDrain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS (Note 6)
Ciss
Coss
Crss
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
VGS = 0 V, f = 1.0 MHz,
VDS = 15 V
VGS = 4.5 V, VDS = 15 V,
ID = 30 A
VGS = 10 V, VDS = 15 V,
ID = 30 A
TurnOn Delay Time
td(on)
Rise Time
TurnOff Delay Time
tr
td(off)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
Fall Time
tf
TurnOn Delay Time
td(on)
Rise Time
TurnOff Delay Time
tr
td(off)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
Fall Time
tf
5. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
6. Switching characteristics are independent of operating junction temperatures.
Symbol
RqJC
RqJCTAB
RqJA
RqJA
Value
5.1
4.3
58.2
110
Unit
°C/W
Min Typ Max Unit
30
15
V
mV/°C
1.0
10
"100
mA
nA
1.0 1.7 2.2 V
4.0 mV/°C
6.5 8.0 mW
6.5
9.5 12
9.5
52 S
1314
487
17.4
7.6
2.1
4.3
1.3
17.5
pF
nC
nC
11 ns
21
17
2.7
8.0 ns
19
21
2.3
http://onsemi.com
2


Part Number NTD4909N
Description Power MOSFET
Maker ON Semiconductor
Total Page 8 Pages
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