Datasheet4U Logo Datasheet4U.com

NTD4904N - Power MOSFET

Features

  • 30 V, 79 A, Single N.
  • Channel, DPAK/IPAK.
  • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb.
  • Free Devices http://onsemi. com V(BR)DSS 30 V RDS(on) MAX 3.7 mW @ 10 V 5.5 mW @ 4.5 V D ID MAX 79 A.

📥 Download Datasheet

Datasheet preview – NTD4904N

Datasheet Details

Part number NTD4904N
Manufacturer ON Semiconductor
File Size 175.28 KB
Description Power MOSFET
Datasheet download datasheet NTD4904N Datasheet
Additional preview pages of the NTD4904N datasheet.

📁 Similar Datasheet

  • NTD40 - HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS (EDI)
  • NTD42A - Thyristor/Diode Module (Naina Semiconductor)
  • NTD4302 - N-Channel MOSFET (ON)
  • NTD45 - HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS (EDI)
  • NTD08 - HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS (EDI)
  • NTD10 - HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS (EDI)
  • NTD106B - Thyristor/Diode Module (Naina Semiconductor)
  • NTD110N02R-001G - N-Channel MOSFET (VBsemi)
  • NTD12 - HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS (EDI)
  • NTD122C - Thyristor/Diode Module (Naina Semiconductor)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com NTD4904N Power MOSFET Features 30 V, 79 A, Single N−Channel, DPAK/IPAK • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com V(BR)DSS 30 V RDS(on) MAX 3.7 mW @ 10 V 5.5 mW @ 4.
Published: |