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  ON Semiconductor Electronic Components Datasheet  

NTD4913N Datasheet

Power MOSFET

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NTD4913N pdf
NTD4913Nwww.DataSheet4U.com
Power MOSFET
30 V, 32 A, Single NChannel, DPAK/IPAK
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are PbFree Devices
Applications
CPU Power Delivery
DCDC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
C(Nuortreen1t)RqJA
TA = 25°C
TA = 100°C
VDSS
VGS
ID
30
±20
10.5
7.4
V
V
A
Power Dissipation
RqJA (Note 1)
Continuous Drain
C(Nuortreen2t)RqJA
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
Steady
State
TA = 25°C
TA = 25°C
TA = 100°C
TA = 25°C
TC = 25°C
TC = 100°C
PD
ID
PD
ID
2.5 W
7.7 A
5.4
1.36 W
32 A
23
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
tp=10ms
TC = 25°C
TA = 25°C
PD
IDM
24 W
132 A
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
IDmaxPkg
TJ,
TSTG
IS
dV/dt
60
55 to
+175
20
8.0
A
°C
A
V/ns
Single Pulse DraintoSource Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 21 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
TL
22 mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2009
June, 2009 Rev. 0
1
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
10.5 mW @ 10 V
15 mW @ 4.5 V
D
ID MAX
32 A
G
S
NCHANNEL MOSFET
4
4
4
12
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
1 23
1 23
CASE 369AC CASE 369D
3 IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
1
23
Gate Drain Source
Y = Year
WW = Work Week
4913N = Device Code
G = PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Publication Order Number:
NTD4913N/D


  ON Semiconductor Electronic Components Datasheet  

NTD4913N Datasheet

Power MOSFET

No Preview Available !

NTD4913N pdf
NTD4913N
www.DataSThHeEetR4MU.AcoLmRESISTANCE MAXIMUM RATINGS
Parameter
JunctiontoCase (Drain)
JunctiontoTAB (Drain)
JunctiontoAmbient – Steady State (Note 3)
JunctiontoAmbient – Steady State (Note 4)
3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
4. Surfacemounted on FR4 board using the minimum recommended pad size.
Symbol
RqJC
RqJCTAB
RqJA
RqJA
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 5)
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 250 mA
VGS = 0 V,
VDS = 24 V
TJ = 25 °C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
DraintoSource On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
RDS(on)
gFS
VGS = 10 V
ID = 30 A
ID = 15 A
VGS = 4.5 V
ID = 30 A
ID = 15 A
VDS = 1.5 V, ID = 30 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
GatetoSource Charge
GatetoDrain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS (Note 6)
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
VGS = 0 V, f = 1.0 MHz, VDS = 15 V
VGS = 4.5 V, VDS = 15 V; ID = 30 A
VGS = 10 V, VDS = 15 V;
ID = 30 A
TurnOn Delay Time
td(ON)
Rise Time
TurnOff Delay Time
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
Fall Time
tf
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
7. Assume terminal length of 110 mils.
Min
30
1.0
Value
6.2
4.3
59
110
Unit
°C/W
Typ Max Unit
V
15 mV/°C
1
10
±100
mA
nA
1.67
4.0
8.2
8.2
12.5
12.5
39
2.2 V
mV/°C
10.5
15 mW
S
1013
370
12.5
6.2
1.7
3.7
0.9
13
pF
nC
nC
10
21
14.7 ns
2.3
http://onsemi.com
2


Part Number NTD4913N
Description Power MOSFET
Maker ON Semiconductor
Total Page 8 Pages
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