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  ON Semiconductor Electronic Components Datasheet  

NTDV20P06L Datasheet

Power MOSFET

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NTD20P06L, NTDV20P06L
Power MOSFET
60 V, 15.5 A, Single PChannel, DPAK
Features
Withstands High Energy in Avalanche and Commutation Modes
Low Gate Charge for Fast Switching
AEC Q101 Qualified NTDV20P06L
These Devices are PbFree and are RoHS Compliant
Applications
Bridge Circuits
Power Supplies, Power Motor Controls
DCDC Conversion
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource
Voltage
Continuous
Drain Current
(Note 1)
Continuous
NonRepetitive tp v10 ms
Steady State TA = 25°C
VDSS
VGS
VGSM
ID
60
$20
$30
15.5
V
V
A
Power Dissipa-
tion (Note 1)
Steady State TA = 25°C
PD
65 W
Pulsed Drain
Current
tp = 10 ms
IDM $50 A
Operating Junction and Storage Temperature
Single Pulse DraintoSource Avalanche
Energy (VDD = 25 V, VGS = 5 V, IPK = 15 A,
L = 2.7 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TJ,
TSTG
EAS
55 to
175
304
°C
mJ
TL 260 °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
JunctiontoCase (Drain)
RqJC
2.3 °C/W
JunctiontoAmbient – Steady State (Note 1)
RqJA
80
JunctiontoAmbient – Steady State (Note 2)
RqJA
110
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces)
2. Surfacemounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412 in sq.)
http://onsemi.com
V(BR)DSS
60 V
RDS(on) TYP
130 mW @ 5.0 V
ID MAX
(Note 1)
15.5 A
PChannel
D
G
4
12
3
DPAK
CASE 369C
STYLE 2
4
S
MARKING DIAGRAMS
4
Drain
1
Gate
2
Drain
3
Source
4
Drain
1 23
IPAK/DPAK
CASE 369D
STYLE 2
12 3
Gate Drain Source
20P06L
A
Y
WW
G
Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
August, 2011 Rev. 6
1
Publication Order Number:
NTD20P06L/D


  ON Semiconductor Electronic Components Datasheet  

NTDV20P06L Datasheet

Power MOSFET

No Preview Available !

NTD20P06L, NTDV20P06L
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V,
VDS = 60 V
TJ = 25°C
TJ = 150°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
DraintoSource On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
DraintoSource OnVoltage
gFS
VDS(on)
CHARGES AND CAPACITANCES
VGS = VDS, ID = 250 mA
VGS = 5.0 V, ID = 7.5 A
VGS = 5.0 V, ID = 15 A
VDS = 10 V, ID = 7.5 A
VGS = 5.0 V,
ID = 7.5 A
TJ = 25°C
TJ = 150°C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
GatetoSource Charge
GatetoDrain Charge
SWITCHING CHARACTERISTICS (Note 4)
CISS
COSS
CRSS
QG(TOT)
QGS
QGD
VGS = 0 V, f = 1 MHz, VDS = 25 V
VGS = 5.0 V, VDS = 48 V,
ID = 18 A
TurnOn Delay Time
td(ON)
Rise Time
tr
TurnOff Delay Time
td(OFF)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 5.0 V, VDD = 30 V,
ID = 15 A, RG = 9.1 W
Forward Diode Voltage
VSD
VGS = 0 V, IS = 15 A
TJ = 25°C
TJ = 150°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta VGS = 0 V, dIS/dt = 100 A/ms,
tb IS = 12 A
Reverse Recovery Charge
QRR
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%
4. Switching characteristics are independent of operating junction temperatures
Min
60
1.0
Typ Max Units
74 V
64 mV/°C
1.0
10
±100
mA
nA
1.5
3.1
0.130
0.143
11
2.0
0.150
V
mV/°C
W
1.2
1.9
S
V
740 1190
207 300
66 120
15 26
4.0
7.0
pF
nC
11 20 ns
90 180
28 50
70 135
1.5 2.5
1.3
60
39
21
0.13
V
ns
nC
http://onsemi.com
2


Part Number NTDV20P06L
Description Power MOSFET
Maker ON Semiconductor
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NTDV20P06L Datasheet PDF






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