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NTH4L015N065SC1 - SiC MOSFET

Features

  • Typ. RDS(on) = 12 mW @ VGS = 18 V Typ. RDS(on) = 15 mW @ VGS = 15 V.
  • Ultra Low Gate Charge (QG(tot) = 283 nC).
  • High Speed Switching with Low Capacitance (Coss = 430 pF).
  • 100% Avalanche Tested.
  • TJ = 175°C.
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
  • Free 2LI (on second level interconnection) Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 12 mohm, 650 V, M2, TO-247-4L NTH4L015N065SC1 Features • Typ. RDS(on) = 12 mW @ VGS = 18 V Typ.
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