Part NTH4L015N065SC1
Description SiC MOSFET
Category MOSFET
Manufacturer onsemi
Size 351.08 KB
onsemi

NTH4L015N065SC1 Overview

Key Features

  • Typ. RDS(on) = 12 mW @ VGS = 18 V Typ. RDS(on) = 15 mW @ VGS = 15 V
  • Ultra Low Gate Charge (QG(tot) = 283 nC)
  • High Speed Switching with Low Capacitance (Coss = 430 pF)
  • 100% Avalanche Tested
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb-Free 2LI (on second level interconnection)