NTH4L045N065SC1
NTH4L045N065SC1 is SiC MOSFET manufactured by onsemi.
Features
- Typ. RDS(on) = 33 m W @ VGS = 18 V
Typ. RDS(on) = 45 m W @ VGS = 15 V
- Ultra Low Gate Charge (QG(tot) = 105 n C)
- High Speed Switching with Low Capacitance (Coss = 162 p F)
- 100% Avalanche Tested
- TJ = 175°C
- This Device is Halide Free and Ro HS pliant with exemption 7a,
Pb- Free 2LI (on second level interconnection)
Typical Applications
- SMPS (Switching Mode Power Supplies)
- Solar Inverters
- UPS (Uninterruptable Powere Supplies)
- Energy Storages
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
- 8/+22 V
Remended Operation Values of Gate- to- Source Voltage
TC < 175°C
VGSop
- 5/+18
Continuous Drain Current (Note 1)
Power Dissipation (Note 1)
Steady State
TC = 25°C
187 W
Continuous Drain Current (Note 1)
Power Dissipation (Note 1)
Steady State
TC =...
