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NTH4L045N065SC1 - SiC MOSFET

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ON Semiconductor

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NTH4L045N065SC1 SiC MOSFET by ON Semiconductor - Datasheet Preview — Datasheet preview – NTH4L045N065SC1

Datasheet Details

Part number	NTH4L045N065SC1
Manufacturer	ON Semiconductor
File Size	344.99 KB
Description	SiC MOSFET
Datasheet	NTH4L045N065SC1 Datasheet
Additional preview pages of the NTH4L045N065SC1 datasheet.

Product details

Features

Typ. RDS(on) = 33 mW @ VGS = 18 V Typ. RDS(on) = 45 mW @ VGS = 15 V.
Ultra Low Gate Charge (QG(tot) = 105 nC).
High Speed Switching with Low Capacitance (Coss = 162 pF).
100% Avalanche Tested.
TJ = 175°C.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection) Typical.

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Published: Feb 16, 2023 |