Part NTH4L060N065SC1
Description SiC MOSFET
Category MOSFET
Manufacturer onsemi
Size 338.87 KB
onsemi

NTH4L060N065SC1 Overview

Key Features

  • Typ. RDS(on) = 44 mW @ VGS = 18 V Typ. RDS(on) = 60 mW @ VGS = 15 V
  • Ultra Low Gate Charge (QG(tot) = 74 nC)
  • Low Capacitance (Coss = 133 pF)
  • 100% Avalanche Tested
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb-Free 2LI (on second level interconnection)