• Part: NTH4L060N065SC1
  • Description: SiC MOSFET
  • Manufacturer: onsemi
  • Size: 338.87 KB
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NTH4L060N065SC1 Key Features

  • Typ. RDS(on) = 44 mW @ VGS = 18 V
  • Ultra Low Gate Charge (QG(tot) = 74 nC)
  • Low Capacitance (Coss = 133 pF)
  • 100% Avalanche Tested
  • TJ = 175°C
  • This Device is Halide Free and RoHS pliant with exemption 7a

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