NTH4L060N065SC1
NTH4L060N065SC1 is SiC MOSFET manufactured by onsemi.
Features
- Typ. RDS(on) = 44 m W @ VGS = 18 V
Typ. RDS(on) = 60 m W @ VGS = 15 V
- Ultra Low Gate Charge (QG(tot) = 74 n C)
- Low Capacitance (Coss = 133 p F)
- 100% Avalanche Tested
- TJ = 175°C
- This Device is Halide Free and Ro HS pliant with exemption 7a,
Pb- Free 2LI (on second level interconnection)
Typical Applications
- SMPS (Switching Mode Power Supplies)
- Solar Inverters
- UPS (Uninterruptable Power Supplies)
- Energy Storages
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
- 8/+22 V
Remended Operation Values TC < 175°C VGSop
- 5/+18 V of Gate- to- Source Voltage
Continuous Drain Current (Note 1)
Steady TC = 25°C
State
Power Dissipation (Note 1)
176 W
Continuous Drain Current (Note 1)
Steady TC = 100°C
State
Power Dissipation (Note...
