NTH4L160N120SC1 Datasheet - ON Semiconductor

SiC MOSFET

* Typ. RDS(on) = 160 mW

* Ultra Low Gate Charge (QG(tot) = 34 nC)

* High Speed Switching with Low Capacitance (Coss = 49.5 pF)

* 100% Avalanche Tested

* TJ = 175°C

* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb

* Free 2LI (

NTH4L160N120SC1

350.28 KB

Sic mosfet.

📁 Related Datasheet

NTH4L013N120M3S SiC MOSFET (ON Semiconductor)

NTH4L014N120M3P SiC MOSFET (ON Semiconductor)

NTH4L015N065SC1 SiC MOSFET (ON Semiconductor)

NTH4L020N090SC1 SiC MOSFET (ON Semiconductor)

NTH4L020N120SC1 SiC MOSFET (ON Semiconductor)

NTH4L022N120M3S SiC MOSFET (ON Semiconductor)

NTH4L023N065M3S SiC MOSFET (ON Semiconductor)

NTH4L025N065SC1 SiC MOSFET (ON Semiconductor)

NTH4L027N65S3F N-Channel MOSFET (ON Semiconductor)

NTH4L028N170M1 SiC MOSFET (ON Semiconductor)

TAGS

NTH4L160N120SC1 SiC MOSFET ON Semiconductor

Image Gallery