NTH4L160N120SC1
NTH4L160N120SC1 is SiC MOSFET manufactured by onsemi.
Features
- Typ. RDS(on) = 160 m W
- Ultra Low Gate Charge (QG(tot) = 34 n C)
- High Speed Switching with Low Capacitance (Coss = 49.5 p F)
- 100% Avalanche Tested
- TJ = 175°C
- This Device is Halide Free and Ro HS pliant with exemption 7a,
Pb- Free 2LI (on second level interconnection)
Typical Applications
- UPS
- DC-DC Converter
- Boost Inverter
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
- 15/+25 V
Remended Operation Values TC < 175°C VGSop
- 5/+20 V of Gate- to- Source Voltage
Continuous Drain Current (Note 2)
Steady TC = 25°C
State
17.3 A
Power Dissipation
(Note 2)
Continuous Drain
Steady TC = 100°C
Current (Notes 1, 2)
State
12.3 A
Power Dissipation (Notes 1,...
