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NTH4L160N120SC1 - SiC MOSFET

Key Features

  • Typ. RDS(on) = 160 mW.
  • Ultra Low Gate Charge (QG(tot) = 34 nC).
  • High Speed Switching with Low Capacitance (Coss = 49.5 pF).
  • 100% Avalanche Tested.
  • TJ = 175°C.
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
  • Free 2LI (on second level interconnection) Typical.

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Full PDF Text Transcription (Reference)

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L NTH4L160N120SC1 Features • Typ. RDS(on) = 160 mW • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.5 pF) • 100% Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC-DC Converter • Boost Inverter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 1200 V Gate−to−Source Voltage VGS −15/+25 V Recommended Operation Values TC < 175°C VGSop −5/+20 V of Gate−to−Source Voltage Continuous Drain Current (Note 2) Steady TC = 25°C ID State 17.