Part NTH4L160N120SC1
Description SiC MOSFET
Category MOSFET
Manufacturer onsemi
Size 350.28 KB
onsemi
NTH4L160N120SC1

Overview

  • Typ. RDS(on) = 160 mW
  • Ultra Low Gate Charge (QG(tot) = 34 nC)
  • High Speed Switching with Low Capacitance (Coss = 49.5 pF)
  • 100% Avalanche Tested
  • TJ = 175°C
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb-Free 2LI (on second level interconnection)