Datasheet4U Logo Datasheet4U.com

NTHL020N090SC1 - 900V SiC MOSFET

Key Features

  • Typ. RDS(on) = 20 mW @ VGS = 15 V.
  • Typ. RDS(on) = 16 mW @ VGS = 18 V.
  • Ultra Low Gate Charge (QG(tot) = 196 nC).
  • Low Effective Output Capacitance (Coss = 296 pF).
  • 100% UIL Tested.
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
  • Free 2LI (on second level interconnection) Typical.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NTHL032N065M3S SiC MOSFET onsemi
NTHL040N65S3F N-Channel MOSFET INCHANGE
NTHL041N60S5H N-Channel Power MOSFET onsemi
NTH080C3 Crystal Clock Oscillator Saronix
NTH2xxx (NTH Series) Crystal Clock Oscillator Saronix

Other Datasheets by onsemi

Part Number Description
NTHL020N120SC1 N-Channel MOSFET
NTHL023N065M3S SiC MOSFET
NTHL025N065SC1 SiC MOSFET
NTHL027N65S3HF N-Channel MOSFET
NTHL033N65S3HF N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 900 V, M2, TO-247-3L V(BR)DSS 900 V RDS(ON) MAX 28 mW @ 15 V ID MAX 118 A D NTHL020N090SC1 Features • Typ. RDS(on) = 20 mW @ VGS = 15 V • Typ.