NTHL020N090SC1
NTHL020N090SC1 is 900V SiC MOSFET manufactured by onsemi.
Features
- Typ. RDS(on) = 20 m W @ VGS = 15 V
- Typ. RDS(on) = 16 m W @ VGS = 18 V
- Ultra Low Gate Charge (QG(tot) = 196 n C)
- Low Effective Output Capacitance (Coss = 296 p F)
- 100% UIL Tested
- This Device is Halide Free and Ro HS pliant with exemption 7a,
Pb- Free 2LI (on second level interconnection)
Typical Applications
- UPS
- DC- DC Converter
- Boost Inverter
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
Gate- to- Source Voltage
Remended Operation Values of Gate
- Source Voltage
VDSS
VGS +22/- 8 V
TC < 175°C VGSop +15/- 5 V
Continuous Drain Current Rq JC
Steady TC = 25°C
State
Power Dissipation Rq JC
503 W
Continuous Drain Current Rq JC
Steady TC = 100°C
State
Power Dissipation Rq JC
251 W
Pulsed Drain Current (Note...
