* Typ. RDS(on) = 20 mW @ VGS = 15 V
* Typ. RDS(on) = 16 mW @ VGS = 18 V
* Ultra Low Gate Charge (QG(tot) = 196 nC)
* Low Effective Output Capacitance (Coss = 296 pF)
* 100% UIL Tested
* This Device is Halide Free and RoHS Compliant with exemption 7a, P
NTHL020N090SC1 Datasheet (332.86 KB)
NTHL020N090SC1
332.86 KB
900v sic mosfet.
DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET EliteSiC, 20 mohm, 900 V, M2, TO-247-3L V(BR)DSS 900 V RDS(ON) MAX 28 mW @ 15 V I.
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