900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




  ON Semiconductor Electronic Components Datasheet  

NTHL020N090SC1 Datasheet

N-Channel MOSFET

No Preview Available !

MOSFET – SiC Power, Single
N-Channel, TO247-3L
900 V, 20 mW, 118 A
NTHL020N090SC1
Features
Typ. RDS(on) = 20 mW
Ultra Low Gate Charge (QG(tot) = 196 nC)
Low Effective Output Capacitance (Coss = 296 pF)
100% UIL Tested
RoHS Compliant
Typical Applications
UPS
DC/DC Converter
Boost Inverter
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Recommended Operation Val-
ues of Gate Source Voltage
TC < 175°C
VDSS
VGS
VGSop
900
+19/10
+15/5
V
V
V
Continuous Drain
Current RqJC
Steady
State
TC = 25°C
Power Dissipation
RqJC
Continuous Drain
Current RqJC
Steady TC = 100°C
State
Power Dissipation
RqJC
Pulsed Drain Current (Note 2)
TA = 25°C
Single Pulse Surge
Drain Current Capa-
bility(Note 3)
TA = 25°C, tp = 10 ms,
RG = 4.7 W
IDC
PDC
IDC
PDC
IDM
IDSC
118 A
503 W
83 A
251 W
472 A
854 A
Operating Junction and Storage Temperature
Range
TJ, Tstg 55 to
+175
°C
Source Current (Body Diode)
IS 153 A
Single Pulse DraintoSource Avalanche Ener-
gy (IL = 23 Apk, L = 1 mH) (Note 4)
EAS
264 mJ
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. Peak current might be limited by transconductance.
4. EAS of 162 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 23 A, VDD =
100 V, VGS = 15 V.
www.onsemi.com
V(BR)DSS
900 V
RDS(ON) MAX
28 mW @ 15 V
D
ID MAX
118 A
G
S
NCHANNEL MOSFET
G DS
TO247 LONG LEADS
CASE 340CX
MARKING DIAGRAM
$Y&Z&3&K
NTHL020
N090SC1
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Date Code (Year & Week)
&K = Lot
NTHL020N090SC1 = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2019
March, 2020 Rev. 1
1
Publication Order Number:
NTHL020N090SC1/D


  ON Semiconductor Electronic Components Datasheet  

NTHL020N090SC1 Datasheet

N-Channel MOSFET

No Preview Available !

NTHL020N090SC1
Table 1. THERMAL CHARACTERISTICS
Parameter
Thermal Resistance JunctiontoCase (Note 1)
Thermal Resistance JunctiontoAmbient (Note 1)
Symbol
RθJC
RθJA
Max
0.30
40
Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 1 mA
ID = 1 mA, refer to 25°C
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS
IDSS
IGSS
VGS = 0 V
VDS = 900 V
TJ = 25°C
TJ = 175°C
VGS = +19/10 V, VDS = 0 V
Gate Threshold Voltage
Recommended Gate Voltage
DraintoSource On Resistance
VGS(TH)
VGOP
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS , ID = 20 mA
VGS = 15 V, ID = 60 A, TJ = 25°C
VGS = 15 V, ID = 60 A, TJ = 175°C
VDS = 20 V, ID = 60 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
GatetoSource Charge
GatetoDrain Charge
GateResistance
SWITCHING CHARACTERISTICS
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
RG
VGS = 0 V, f = 1 MHz,
VDS = 450 V
VGS = 5/I1D5=V6, 0VDAS = 720 V,
f = 1 MHz
TurnOn Delay Time
td(ON)
Rise Time
tr
TurnOff Delay Time
td(OFF)
Fall Time
tf
TurnOn Switching Loss
EON
TurnOff Switching Loss
EOFF
Total Switching Loss
ETOT
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 5/15 V, VDS = 720 V,
ID = 60 A, RG = 2.5 W,
Inductive Load
Continuous DrainSource Diode Forward
Current
ISD
VGS = 5 V, TJ = 25°C
Pulsed DrainSource Diode Forward Current
(Note 2)
ISDM
VGS = 5 V, TJ = 25°C
Forward Diode Voltage
VSD VGS = 5 V, ISD = 30 A, TJ = 25°C
Min
900
1.8
5
Typ
500
2.7
20
27
49
4415
296
24
196
42
78
55
1.6
40
63
55
13
2025
201
2226
3.8
Units
°C/W
°C/W
Max Unit
V
mV/°C
100 mA
250 mA
±1 mA
4.3 V
+15 V
28 mW
mW
S
pF
nC
W
ns
mJ
153 A
472 A
V
www.onsemi.com
2


Part Number NTHL020N090SC1
Description N-Channel MOSFET
Maker ON Semiconductor
PDF Download

NTHL020N090SC1 Datasheet PDF






Similar Datasheet

1 NTHL020N090SC1 N-Channel MOSFET
ON Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy