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  ON Semiconductor Electronic Components Datasheet  

NTLTD7900ZR2 Datasheet

N-Channel Micro-8 Leadless

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NTLTD7900ZR2
Power MOSFET
9 A, 20 V, Logic Level, N−Channel
Micro−8 Leadless
EZFETsare an advanced series of Power MOSFETs which
contain monolithic back−to−back zener diodes. These zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature ultra low RDS(on) and true
logic level performance. EZFET devices are designed for use in low
voltage, high speed switching applications where power efficiency is
important. Typical applications are dc−dc converters, and power
management in portable and battery powered products such as
computers, printers, cellular and cordless phones.
Applications
Zener Protected Gates Provide Electrostatic Discharge Protection
Designed to Withstand 4000 V Human Body Model
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life
Logic Level Gate Drive − Can be Driven by Logic ICs
Micro−8 Leadless Surface Mount Package − Saves Board Space
IDSS Specified at Elevated Temperature
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Steady
Rating
Symbol 10 Secs State
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (Note 1)
TA = 25°C
TA = 85°C
Pulsed Drain Current
(tp v 10 ms)
VDSS
VGS
ID
IDM
20
±12
9.0 6.0
6.4 4.3
30
V
V
A
A
Continuous Source−Diode
Conduction (Note 1)
Is 2.9 1.4 A
Total Power Dissipation (Note 1)
TA = 25°C
TA = 85°C
Operating Junction and Storage
Temperature Range
PD
TJ, Tstg
3.2 1.5
1.7 0.79
−55 to 150
W
°C
Thermal Resistance (Note 1)
Junction−to−Ambient
RqJA
38
82 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to 1x 1FR−4 board.
http://onsemi.com
9 AMPERES
20 VOLTS
RDS(on) = 26 mW
(VGS = 4.5 V, ID = 6.5 A)
RDS(on) = 31 mW
(VGS = 2.5 V, ID = 5.8 A)
D
D
2.4 kW
G1
2.4 kW
G2
N−Channel
S1 S2
N−Channel
MARKING DIAGRAM
1
Micro−8 Leadless
CASE 846C
1
7900
AYWW
A = Assembly Location
Y = Year
WW = Work Week
PIN ASSIGNMENT
Drain 8
Drain 7
Drain 6
Drain 5
Drain
1 Source 1
2 Gate 1
3 Source 2
4 Gate 2
(Bottom View)
ORDERING INFORMATION
Device
Package
Shipping
NTLTD7900ZR2 Micro−8 LL 2500 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 4
1
Publication Order Number:
NTLTD7900ZR2/D


  ON Semiconductor Electronic Components Datasheet  

NTLTD7900ZR2 Datasheet

N-Channel Micro-8 Leadless

No Preview Available !

NTLTD7900ZR2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 2)
(VGS = 0 Vdc, ID = 250 mAdc)
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 85°C)
Gate−Body Leakage Current
(VGS = "4.5 Vdc, VDS = 0 Vdc)
(VGS = "12 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Note 2)
(VDS = VGS, ID = 250 mAdc)
Static Drain−to−Source On−Resistance (Note 2)
(VGS = 4.5 Vdc, ID = 6.5 Adc)
(VGS = 2.5 Vdc, ID = 5.8 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 16 Vdc, VGS = 0 V,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VGS = 4.5 Vdc, VDD = 10 Vdc,
ID = 1.0 Adc, RG = 9.1 W)
(Note 2)
Fall Time
Gate Charge
Gate Charge
(VGS = 4.5 Vdc, ID = 6.5 Adc,
VDS = 10 Vdc)
(Note 2)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 1.0 Adc, VGS = 0 Vdc)
IS = 1.0 Adc, VGS = 0 Vdc, TJ = 85°C)
(Note 2)
2. Pulse Test: Pulse Width S 300 ms, Duty Cycle S 2%.
3. Switching characteristics are independent of operating junction temperatures.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
VSD
Min
20
0.4
Typ
24
0.67
21
27
7.4
237
4.1
0.55
1.17
1.87
4.8
12
0.7
3.7
0.69
0.62
Max Unit
Vdc
mAdc
1.0
20
1.0 mAdc
500 mAdc
Vdc
1.0
mW
26
31
15 pF
400
10 pF
1.0 ms
2.0
3.0
7.0 ms
18 nC
− nC
0.8 Vdc
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2


Part Number NTLTD7900ZR2
Description N-Channel Micro-8 Leadless
Maker ON Semiconductor
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