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NTLGD3502N
MOSFET – Power, Dual, N-Channel, DFN6 3X3 mm
20 V, 5.8 A/4.6 A
Features
• Exposed Drain Package • Excellent Thermal Resistance for Superior Heat Dissipation • Low Threshold Levels • Low Profile (< 1 mm) Allows It to Fit Easily into Extremely Thin
Environments
• This is a Pb−Free Device
Applications
• DC−DC Converters (Buck and Boost Circuits) • Power Supplies • Hard Disk Drives
MOSFET I MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
20
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current (Note 1)
Steady TA = 25°C
ID
State TA = 85°C
4.3
A
3.0
t ≤ 5.0 s TA = 25°C
5.8
Power Dissipation (Note 1)
Steady State
TA = 25°C
PD
1.74
W
Pulsed Drain Current
t ≤10 ms
IDM
17.
NTLGD3502N Datasheet
