Datasheet Summary
MOSFET
- Power, Dual, N-Channel
80 V, 15 mW, 31 A
Features
- Small Footprint (5x6 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- These Devices are Pb- Free and are RoHS pliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
±20
Continuous Drain Current RqJC (Notes 1, 2, 3)
Steady TC = 25°C
State
TC = 100°C
Power Dissipation RqJC (Notes 1, 2)
TC = 25°C
TC = 100°C
Continuous Drain Current RqJA (Notes 1, 2, 3)
Steady TA = 25°C
State
TA =...