NTMFS10N3D2C
Description
This N-Channel MV MOSFET is produced using
ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Features
- Shielded Gate MOSFET Technology
- Max r DS(on) = 3.2 m W at VGS = 10 V, ID = 67 A
- Max r DS(on) = 9 m W at VGS = 6 V, ID = 33 A
- 50% Lower Qrr than Other MOSFET Suppliers
- Lowers Switching Noise/EMI
- MSL1 Robust Package Design
- 100% UIL Tested
- These Devices are Pb- Free and are Ro HS pliant
Applications
- Primary DC- DC MOSFET
- Synchronous Rectifier in DC- DC and AC- DC
- Motor Drive
- Solar
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
Drain to Source Voltage
Gate to Source Voltage
±20
Drain Current:
Continuous, TC = 25°C (Note 5)
Continuous, TC = 100°C (Note 5)
Continuous, TA = 25°C (Note...
