Datasheet Details
| Part number | NTMFS10N3D2C |
|---|---|
| Manufacturer | onsemi |
| File Size | 369.80 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 NTMFS10N3D2C Datasheet
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General Description
ON Semiconductor’s advanced PowerTrench process that incorporates Shielded Gate technology.
This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Key Features
- Shielded Gate MOSFET Technology.
- Max rDS(on) = 3.2 mW at VGS = 10 V, ID = 67 A.
- Max rDS(on) = 9 mW at VGS = 6 V, ID = 33 A.
- 50% Lower Qrr than Other MOSFET Suppliers.
- Lowers Switching Noise/EMI.
- MSL1 Robust Package Design.
- 100% UIL Tested.
- These Devices are Pb.
- Free and are RoHS Compliant.