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NTMFS4833N - Power MOSFET

Key Features

  • Low RDS(on) to Minimize Conduction Losses.
  • Low Capacitance to Minimize Driver Losses.
  • Optimized Gate Charge to Minimize Switching Losses.
  • These are Pb.
  • Free Devices.

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Full PDF Text Transcription for NTMFS4833N (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NTMFS4833N. For precise diagrams, and layout, please refer to the original PDF.

NTMFS4833N Power MOSFET 30 V, 191 A, Single N−Channel, SO−8FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized...

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duction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb−Free Devices Applications • Refer to Application Note AND8195/D • CPU Power Delivery • DC−DC Converters • Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJA (Note 1) TA = 25°C ID TA = 85°C 28 A 20.5 Power Dissipation RqJA (Note 1) TA = 25°C PD 2.7 W Continuous Drain TA = 25°C ID Current RqJA (Note 2) Steady TA = 85°C State Power Dissipation TA = 25°C PD Rq

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