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NTMFS4833NS
Power MOSFET
30 V, 156 A, Single N−Channel, SO−8 FL
Features
• Accurate, Lossless Current Sensing • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery • DC−DC Converters • Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain C(Nuortreen1t)RqJA
VDSS 30 V
VGS ±20 V
TA = 25°C
ID
26 A
TA = 85°C
18
Power Dissipation RqJA (Note 1) Continuous Drain C(Nuortreen2t)RqJA
Power Dissipation RqJA (Note 2) Continuous Drain C(Nuortreen1t)RqJC
Steady State
TA = 25°C
TA = 25°C T
NTMFS4833NS Datasheet
