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NTMFS4833N
Power MOSFET
30 V, 191 A, Single N−Channel, SO−8FL
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb−Free Devices
Applications
• Refer to Application Note AND8195/D • CPU Power Delivery • DC−DC Converters • Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJA (Note 1)
TA = 25°C
ID
TA = 85°C
28
A
20.5
Power Dissipation RqJA (Note 1)
TA = 25°C
PD
2.7
W
Continuous Drain
TA = 25°C
ID
Current RqJA (Note 2)
Steady TA = 85°C
State
Power Dissipation
TA = 25°C
PD
RqJA (Note 2)
16
A
12
1.
NTMFS4833N Datasheet
