NTMFS4833N Description
NTMFS4833N Power MOSFET 30 V, 191 A, Single N−Channel, SO−8FL.
NTMFS4833N Key Features
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- Optimized Gate Charge to Minimize Switching Losses
- These are Pb-Free Devices
NTMFS4833N Applications
- Refer to Application Note AND8195/D