NTMFS4841N - Power MOSFET

Features

Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb.
Free Device V(BR)DSS 30 V http://onsemi. com.

onsemi

Datasheet Details

Part number	NTMFS4841N
Manufacturer	onsemi
File Size	109.45 KB
Description	Power MOSFET
Datasheet	NTMFS4841N Datasheet
Additional preview pages of the NTMFS4841N datasheet.

📁 Similar Datasheet

NTMFS010N10G - N-Channel Power MOSFET (onsemi)
NTMFS2D1N08X - N-Channel Power MOSFET (onsemi)
NTMFS6H800NL - N-Channel Power MOSFET (onsemi)
NTMFSC1D9N08X - 80V 201A N-Channel Power MOSFET (onsemi)
NTMFSC2D6N08X - 80V 154A N-Channel Power MOSFET (onsemi)
NTM164M21 - LCD (ETC)
NTM164M21C - LCD (ETC)
NTM88H025S - Tire pressure monitor sensor (NXP)
NTM88H055S - Tire pressure monitor sensor (NXP)
NTM88H065S - Tire pressure monitor sensor (NXP)

Other Datasheets by ON Semiconductor

NTMFS4845N - Power MOSFET
NTMFS4846N - Power MOSFET
NTMFS4847N - Power MOSFET
NTMFS4849N - Power MOSFET
NTMFS4821N - Power MOSFET
NTMFS4823N - Power MOSFET
NTMFS4825NFE - Power MOSFET
NTMFS4833N - Power MOSFET

Full PDF Text Transcription

Click to expand full text

NTMFS4841N Power MOSFET 30 V, 57 A, Single N−Channel, SO−8 FL Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Device V(BR)DSS 30 V http://onsemi.com Applications RDS(ON) MAX 7.0 mW @ 10 V 11.4 mW @ 4.5 V ID MAX 57 A www.DataSheet4U.

Published: Jun 5, 2010 |