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NTMFS4898NF
Power MOSFET
30 V, 117 A, Single N−Channel, SO−8FL
Features
• Integrated Schottky Diode • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery • DC−DC Converters • Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJA (Note 1)
VDSS
30
V
VGS
±20
V
TA = 25°C
ID
22.5
A
TA = 85°C
16.2
Power Dissipation RqJA (Note 1)
Continuous Drain Current RqJA v 10 sec
TA = 25°C
PD
TA = 25°C
ID
TA = 85°C
2.72
W
36.7
A
26.