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NTMFS4897NF Power MOSFET
Features
30 V, 171 A, Single N−Channel, SO−8 FL
• • • • •
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Device
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Applications
V(BR)DSS 30 V
RDS(ON) MAX 2.0 mW @ 10 V 3.0 mW @ 4.
NTMFS4897NF Datasheet
