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  ON Semiconductor Electronic Components Datasheet  

NTMFS5C410NL Datasheet

Power MOSFET

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NTMFS5C410NL
MOSFET – Power, Single,
N-Channel
40 V, 0.82 mW, 330 A
Features
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
C(Nuortreesnt1R, 3qJ)C
Power Dissipation
RqJC (Note 1)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
Continuous Drain
C(Nuortreesnt1R, 2qJ,A3)
Power Dissipation
RqJA (Notes 1 & 2)
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
40
±20
330
230
139
56
50
35
3.2
1.3
900
55 to
+175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
IS 162 A
Single Pulse DraintoSource Avalanche
Energy (IL(pk) = 29 A)
EAS 706 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctiontoCase Steady State
RqJC
0.9 °C/W
JunctiontoAmbient Steady State (Note 2)
RqJA
39
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surfacemounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
www.onsemi.com
V(BR)DSS
40 V
RDS(ON) MAX
0.82 mW @ 10 V
1.2 mW @ 4.5 V
ID MAX
330 A
D (5)
G (4)
S (1,2,3)
NCHANNEL MOSFET
1
DFN5
(SO8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S 5C410L
S AYWZZ
G
D
D
D
5C410L = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
May, 2019 Rev. 6
1
Publication Order Number:
NTMFS5C410NL/D


  ON Semiconductor Electronic Components Datasheet  

NTMFS5C410NL Datasheet

Power MOSFET

No Preview Available !

NTMFS5C410NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 4)
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 250 mA
40
VVDGSS == 400VV,
TJ = 25 °C
TJ = 125°C
VDS = 0 V, VGS = 20 V
V
21.2 mV/°C
10
250 mA
100 nA
Gate Threshold Voltage
Threshold Temperature Coefficient
DraintoSource On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V
ID = 50 A
VGS = 4.5 V
ID = 50 A
VDS = 15 V, ID = 50 A
1.2 2.0 V
5.75
mV/°C
0.65 0.82
0.95 1.2
mW
190 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
GatetoSource Charge
GatetoDrain Charge
Plateau Voltage
SWITCHING CHARACTERISTICS (Note 5)
CISS
COSS
CRSS
QG(TOT)
QG(TOT)
QG(TH)
QGS
QGD
VGP
VGS = 0 V, f = 1 MHz, VDS = 25 V
VGS = 4.5 V, VDS = 20 V; ID = 50 A
VGS = 10 V, VDS = 20 V; ID = 50 A
VGS = 4.5 V, VDS = 20 V; ID = 50 A
8862
3328
77
66
143
6.75
21.4
22
2.7
pF
nC
V
TurnOn Delay Time
td(ON)
Rise Time
tr
TurnOff Delay Time
td(OFF)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDS = 20 V,
ID = 50 A, RG = 1.0 W
20
130
66 ns
177
Forward Diode Voltage
VSD
VISGS=
=0
50
V,
A
TJ = 25°C
TJ = 125°C
0.73 1.2
0.6
V
Reverse Recovery Time
tRR
79.5
Charge Time
Discharge Time
ta
tb
VGS
=
0
V, dIS/dt
IS = 50
=
A
100
A/ms,
39 ns
40.5
Reverse Recovery Charge
QRR
126 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2


Part Number NTMFS5C410NL
Description Power MOSFET
Maker ON Semiconductor
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