NTMFS6H848N Datasheet | onsemi

MOSFET - Power, Single N-Channel 80 V, 64 A, 9.4 mW Features - Small Footprint (5x6 mm) for pact Design - Low RDS(on) to Minimize Conduction Losses - Low QG and Capacitance to Minimize Driver Losses - These Devices are Pb- Free and are RoHS pliant MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Symbol Parameter Value Unit VDSS Drain- to- Source Voltage VGS Gate- to- Source Voltage 20 Continuous Drain Current RqJC (Notes 1, 3) PD Power Dissipation RqJC (Note 1) TC = 25C Steady TC = 100C State TC = 25C TC = 100C Continuous Drain Current RqJA (Notes 1, 2, 3) PD Power Dissipation RqJA (Notes 1, 2) TA =...